Characterization of Thermal Conductivity in Fe-ions Irradiated Single Crystal Silicon

Abstract

In this work, the thermal conductivity degradation of ion-irradiated single crystal Si samples as a function of DPA (displacement per atom) values is studied. The samples are irradiated at room temperature with energetic Fe-ions (3.4 MeV) up to doses of 1×1014, 1×1015, and 1×1016 ions/cm2, which correspond to peak DPA of 0.18, 1.8 and 18, respectively. Modulated thermoreflectance technique is used to extract the thermal conductivity profiles of all samples. A significant thermal conductivity reduction of 82% is observed at DPA as low as 0.13. At the dose of 1×1015 ions/cm2 and beyond, crystal to amorphous phase transition occurs, and the amorphization threshold DPA is approximately 0.85.