Single Event Upset Hardened Design of SRAM Circuits

Xin HE, Xu HUANG, Wu YANG

Abstract


As a very important component of integrated circuits, static memory is particularly sensitive to single event effects in outer space.In order to ensure the normal function of integrated circuits, radiation hardening of static memory is particularly important.The traditional reinforcement technology based on DICE structure has weak ability to resist dynamic SEU. A separated-bit-line structure is proposed to handle the DICE cells upset during reading and writing, and a double module redundancy method is presented to resolve the upset in the peripheral circuits. The results show these methods are effective to mitigate SEU from DICE cell based SRAMs.

Keywords


Single Event Effects, Radiation hardened, SRAMs.


DOI
10.12783/dtcse/ica2019/30757

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