A Low Power Analog Front-End of BJT-based Temperature Sensor for Implanted RFID

Shi-bo FU, Wan-ang XIAO, Ang WANG, Li-na YU, Wan-lin GAO

Abstract


In this paper, a low-power analog front-end (AFE) of BJT-based temperature sensor for implanted Radio Frequency Identification (RFID) is designed. Firstly, the architecture of BJT-based temperature sensor is described. Then a low-power bias circuit in the AFE is proposed to reduce the power consumption, and the bipolar core is optimized to improve the inaccuracy of temperature sensor. At last, the simulation is performed and the chip is fabricated in SMIC 0.18μm technology. The current is 2.6μA with a supply voltage of 1.8V and the current is 1μA when the circuit is disabled. The inaccuracy is 0.6°C from 25°C to 45°C. The power supply rejection ratio (PSRR) is 50dB at DC and 37dB at 1MHz respectively.

Keywords


Low power, BJT-based, Transconductance amplifier, Temperature sensor, Implanted RFID


DOI
10.12783/dtcse/iteee2019/28773

Full Text:

PDF

Refbacks

  • There are currently no refbacks.